Crystallization process in Ge2Sb2Te5 amorphous films

Vacuum

Volumn 84, Issue 7, 2010, Pages 877-881

  Morales Sanchez E ^a   Lain, B ^b   Prokhorov, E ^c,d   Hernandez Landaverde M A ^c   Trapaga, G ^c   Gonzalez Hernandez J ^d  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b UNIVERSITÉ DE LYON   (France)

^c DEPARTAMENTO DE FÍSICA   (Mexico)

^d CENTRO DE INVESTIGACIÓN EN MATERIALES AVANZADOS   (Mexico)

Author keywords

Amorphous films; Impedance measurements; Nuclei; Phase transformation

Indexed keywords

CRYSTALLINE PHASE; CRYSTALLINE PHASE TRANSFORMATION; CRYSTALLIZATION PROCESS; ELECTRICAL IMPEDANCE; IMPEDANCE MEASUREMENT; JOHNSON-MEHL-AVRAMI-KOLMOGOROV; NUCLEATION AND GROWTH; NUCLEI; PHASE TRANSFORMATION; STOCHASTIC LATTICE MODEL; TEMPERATURE INCREASE; TWO PHASIS; WHOLE PROCESS;

COMPUTATIONAL COMPLEXITY; CRYSTALLINE MATERIALS; CRYSTALLIZATION; ELECTRIC IMPEDANCE MEASUREMENT; GERMANIUM; ISOTHERMAL ANNEALING; METASTABLE PHASES; PHASE TRANSITIONS; STOCHASTIC MODELS; TELLURIUM COMPOUNDS;

AMORPHOUS FILMS;

EID: 76849101042     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.12.002     Document Type: Article

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