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Applied Physics Letters

Volumn 94, Issue 24, 2009, Pages

Transient phase change effect during the crystallization process in phase change memory devices

(6) Yeo, E G a,b Zhao, R a Shi, L P a Lim, K G a Chong, T C a,c Adesida, I b

a DATA STORAGE INSTITUTE (Singapore)

b University of Illinois at Urbana Champaign (United States)

c NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION CHARACTERIZATION; CRYSTALLIZATION PROCESS; DELAY TIME; HIGH RESISTANCE; IN-PHASE; LOW RESISTANCE; NUCLEATION AND GROWTH; PULSE DURATIONS; RECOVERY TIME; RESISTANCE CHANGE; TIME PARAMETER; TRANSIENT CURRENT; TRANSIENT PHASE;

CRYSTALLIZATION KINETICS; GROWTH (MATERIALS);

PHASE CHANGE MEMORY;

EID: 67649210567 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3155200 Document Type: Article

Times cited : (5)

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