The effect of inhomogeneous dopant distribution on the electrical transport properties and thermal stability of CdTe:Cl single crystals

Semiconductor Science and Technology

Volumn 25, Issue 3, 2010, Pages

  Popovych, V D ^a   Sizov, F F ^b   Parfenjuk, O A ^c   Tsybrii, Z F ^b  

^a DROHOBYCH IVAN FRANKO STATE PEDAGOGICAL UNIVERSITY   (Ukraine)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CDTE:CL; DOPANT DISTRIBUTION; ELECTRICAL CONDUCTIVITY; ELECTRICAL PARAMETER; ELECTRICAL TRANSPORT PROPERTIES; LOW TEMPERATURES; MODIFIED PHYSICAL VAPOR TRANSPORTS; P-TYPE; ROOM TEMPERATURE; SEMI-INSULATING; TEMPERATURE DEPENDENCE; THERMAL STABILITY;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; CHLORINE; CHLORINE COMPOUNDS; ELECTRIC CONDUCTIVITY; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; HOLE MOBILITY; LIGHT TRANSMISSION; THERMODYNAMIC STABILITY; TRANSPORT PROPERTIES;

SINGLE CRYSTALS;

EID: 76649139517     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/3/035001     Document Type: Article

References (27)

1. Takanashi T and Watanabe S 2001 IEEE Trans. Nucl. Sci. 48 950
2. Biglari B, Samimi M, Koebel J M, Hage-Ali M and Siffert P 1987 Phys. Status Solidi a 100 589
3. Eiche C, Joerger W, Fiederle M, Ebling D, Schwarz R and Benz K W 1995 J. Cryst. Growth 146 98
4. Shin H-Y and Sun C-Y 1998 J. Cryst. Growth 186 354
5. Castaldini A, Cavallini A, Fraboni B, Fernandez P and Piqueras J 1998 J. Appl. Phys. 83 2121
6. Agrinskaya N V and Arkadeva E N 1989 Nucl. Instrum. Methods A 283 260
7. Hage-Ali M and Siffert P 1992 Nucl. Instrum. Methods A 322 313
8. Fiederle M, Eiche C, Salk M, Shwarz R, Benz K W, Stadler W, Hofmann D M and Meyer B K 1998 J. Appl. Phys. 84 6689
9. Grill R, Franc J, Turkevych I, Höschl P, Belas E and Moravec P 2005 Phys. Status Solidi c 2 1489
10. Agrinskaya N V 1993 Mater. Sci. Eng. B 16 172
11. Magee T J, Peng J and Bean J 1975 Phys. Status Solidi a 27 557
12. Popovych V D, Virt I S, Sizov F F, Tetyorkin V V, Tsybrii (Ivasiv) Z F, Darchuk L O, Parfenjuk O A and Ilashchuk M I 2007 J. Cryst. Growth 308 63
13. Sukach A V, Tetyorkin V V, Popovych V D and Popov V M 2003 Proc. SPIE 5198 200
14. Popovych V D, Potera P, Virt I S and Bilyk M F 2009 Semiconductors 43 759
15. Zanio K 1978 Semiconductors and Semimetals. Vol 13: Cadmium Telluride (New York: Academic Press)
16. Turkevych I, Grill R, Franc J, Belas E, Höschl P and Moravec P 2002 Semicond. Sci. Technol. 17 1064
17. Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley)
18. Schall M, Walther M and Uhd Jepsen P 2001 Phys. Rev. B 64 094 301
19. Juretschke H J, Landauer R and Swanson J A 1956 J. Appl. Phys. 27 838
20. Savitsky A V, Parfenyuk O A, Ilashchuk M I, Fouchuk P M and Korbutyak N D 2000 Semicond. Sci. Technol. 15 263
21. Marfaing Y 2001 Thin Solid Films 387 123
22. Kucha L, Drpala J and Luaek J 1996 J. Cryst. Growth 161 94
23. Zha G, Jie W, Li Q, Zeng D, Yang G, Bai X, Wang T, Zhang W and Xu F 2006 Appl. Surf. Sci. 252 8421
24. Zha G, Jie W, Tan T and Wang X 2006 Nucl. Instrum. Methods A 566 495
25. Becker U, Rudolph P, Boyn R, Wienecke M and Utke I 1990 Phys. Status Solidi a 120 653
26. Agrinskaya N V and Matveev O A 1976 Sov. Phys. Semicond. 10 2190
27. Shaw D and Watson E 1984 J. Phys C 17 4945