Luminescence from Cr+3-doped AlN films deposited on optical fiber and silicon substrates for use as waveguides and laser cavities

Applied Optics

Volumn 49, Issue 4, 2010, Pages 653-657

  Maqbool, Muhammad ^a   Wilson, Evan ^a   Clark, Joshua ^a   Ahmad, Iftikhar ^b   Kayani, Asghar ^c  

^a BALL STATE UNIVERSITY   (United States)

^b HAZARA UNIVERSITY   (Pakistan)

^c WESTERN MICHIGAN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; AMORPHOUS FILMS; AMORPHOUS SILICON; FIBERS; LASER RESONATORS; LUMINESCENCE; MAGNETRON SPUTTERING; OPTICAL FIBERS; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION;

LUMINESCENCE PROPERTIES; RF-MAGNETRON SPUTTERING; SI (100) SUBSTRATE; SILICON SUBSTRATES; SURFACE CHARACTERIZATION; TEMPERATURE RISE; THERMALLY ACTIVATED; THICKNESS OF THE FILM;

OPTICAL FILMS;

EID: 76649100457     PISSN: 1559128X     EISSN: 15394522     Source Type: Journal    
DOI: 10.1364/AO.49.000653     Document Type: Article

References (27)

1. M. Maqbool, I. Ahmad, H. H. Richardson, and M. E. Kordesch, "Direct ultraviolet excitation of an amorphous AlN:praesiodimium phosphor by co-doped Gd3 cathodoluminescence," Appl. Phys. Lett. 91, 193511 (2007).
2. +3 for optical devices applications," J. Opt Soc. Am. B 26, 998-1001 (2009).
3. P. Hidalgo, B. Mendez, P. S. Dutta, J. Piqueras, and E. Dieguez, "Luminescent properties of transition-metal-doped GaSb," Phys. Rev. B 57, 6479-6484 (1998).
4. S. Muller, M. Zhou, Q. Li, and C. Ronning, "Intra-shell luminescence of transition-metal-implanted zinc oxide nanowires," Nanotechnology 20, 135704 (2009).
5. M. Maqbool, H. H. Richardson, and M. E. Kordesch, "Effect of material structure and thermal activation on the luminescence of praseodymium doped AlN thin films deposited by rf magnetron sputtering," J. Mater. Sci. Technol. (Sofia) 42, 5657-5660 (2007).
6. M. Maqbool and I. Ahmad, "Ultraviolet spectroscopy of praseodymium doped in AlN and the use of gallium nitride, as ultraviolet filters in radiation shielding and protection," Curr. Appl. Phys. 9, 234-237 (2008).
7. M. Maqbool and T. Ali, "Intense red catho- and photoluminescence from 200nm thick samarium doped amorphous AlN thin films for nano-devices applications," Nanoscale Res. Lett. 4, 748-752 (2009).
8. S. B. Aldabergenova, G. Frank, H. P. Strunk, M. Maqbool, H. H. Richardson, and M. E. Kordesch, "Structure changes of AlN:Ho films with annealing and enhancement of the Ho3 emission," J. Non-Cryst. Solids 352, 1290-1293 (2006).
9. H. Chen, K. Gurumurugan, M. E. Kordesch,W. M. Jadwisienczak, and H. J. Lozykowski, "Visible and infrared emission of GaN:Er thin films grown by sputtering," J. Nitride Semicond. Res. 5, U130-U135 (2000).
10. M. Caldwell, H. H. Richardson, and M. E. Kordesch, "Optical properties of manganese doped amorphous and crystalline aluminum nitride films," J. Nitride Semicond. Res. 5, U142-U147 (2000).
11. K. B. Thurbide and W. A. Aue, "Chemiluminescent emission spectra of lead, chromium, ruthenium, iron, manganese, rhenium, osmium and tungsten in the reactive flow detector ," Spectrochim. Acta, Part B: At. Spectrosc. 57, 843-854 (2002).
12. 4Cl phosphor," J. Lumin. 124, 120-124 (2007).
13. 3," Phys. Rev. B 63, 214104 (2001).
14. 3 part A. theoretical studies of the absorption bands and lines," Phys. Status Solidi A, Appl. Res. 126, 521-531 (2006).
15. W. M. Jadwisienczak, H. J. Lozykowski, F. Perjeru, H. Chen, M. Kordesch, and I. G. Brown, "Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering," Appl. Phys. Lett. 76, 3376-3378 (2000).
16. 3+ thin-film phosphor," Appl. Phys. Lett. 77, 478-479 (2000).
17. V. Dimitrova, P. G. Van Patten, H. Richardson, and M. E. Kordesch, "Photo-, cathodo-, and electroluminescence studies of sputter deposited AlN:Er thin films," Appl. Surf. Sci. 175-176, 480-483 (2001).
18. M.L.Caldwell,C.M.Spalding,V. I. Dimitrova,P.G.VanPatten, M. L. Caldwell, M. E. Kordesch, and H. H. Richardson, "Visible emission from amorphous AlN thin-film phosphors with Cu, Mn, or Cr," J. Vac. Sci. Technol. A 19, 1894-1897 (2001).
19. 3+ thin-film phosphor," Appl. Phys. Lett. 78, 1246-1248 (2001).
20. M. L. Caldwell, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, "Visible luminescent activation of amorphous AlN:Eu thin-film phosphors with oxygen," J. Nitride Semicond. Res. 6, 13-30 (2001).
21. 3+ phosphor," Appl. Phys. Lett. 80, 2207-2209 (2002).
22. H. Chen, K. Chen, D. A. Drabold, and M. E. Kordesch, "Band gap engineering in amorphous AlxGa1-xN: experiment and ab initio calculations," Appl. Phys. Lett. 77, 1117-1119 (2000).
23. M. E. Little and M. E. Kordesch, "Band-gap engineering in sputter-deposited ScxGa1-xN," Appl. Phys. Lett. 78, 2891-2892 (2001).
24. J. F. Suyver, A. Aebischer, S. García-Revilla, P. Gerner, and H. U. Güdel, "Anomalous power dependence of sensitized upconversion luminescence," Phys. Rev. B 71, 125123 (2005).
25. S. V. Frolov, A. Fujii, D. Chinn, Z. V. Vardeny, K. Yoshino, and R. V. Gregory, "Cylindrical microlasers and light emitting devices from conducting polymers," Appl. Phys. Lett. 72, 2811-2813 (1998).
26. S.V. Frolov, Z.V.Vardeny, and K.Yoshino, "Plastic microring lasersonfibersandwires," Appl.Phys.Lett.72,1802-1804(1998).
27. S. V. Frolov, M. Shkunov, Z. V. Vardeny, and K. Yoshino, "Ring microlasers from conducting polymers," Phys. Rev. B 56, R4363-R4366 (1997).