Capacitance-voltage analysis of ZrO2 thin films deposited by thermal MOCVD technique

ECS Transactions

Volumn 25, Issue 8 PART 2, 2009, Pages 901-907

  Mih, T A ^a   Paul, S ^a   Milanov, A P ^b   Bhakta, R ^b   Devi, A ^b  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

^b RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

C-V MEASUREMENT; CAPACITANCE VOLTAGE; CAPACITANCE-VOLTAGE CHARACTERISTICS; CHEMICAL VAPOUR DEPOSITION; COMPLEX PRECURSORS; DIFFERENT FREQUENCY; GUANIDINATES; METAL-ORGANIC; MOCVD; PARASITIC RESISTANCES; VOLTAGE SHIFT; VOLTAGE STRESS;

AMIDES; CAPACITANCE; GATE DIELECTRICS; GATES (TRANSISTOR); HYSTERESIS; ORGANIC CHEMICALS; THIN FILMS; ZIRCONIUM; ZIRCONIUM ALLOYS; ZIRCONIUM COMPOUNDS;

CHEMICAL VAPOR DEPOSITION;

EID: 76549103143     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3207684     Document Type: Conference Paper

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