Ultrasharp Si nanowires produced by plasma-enhanced chemical vapor deposition

Physica Status Solidi - Rapid Research Letters

Volumn 4, Issue 1-2, 2010, Pages 37-39

  Cervenka J ^a   Ledinsky M ^a   Stuchlikova H ^a   Stuchlik J ^a   Vyborny Z ^a   Holovsky J ^a   Hruska K ^a   Fejfar, A ^a   Kocka J ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; FAST GROWTH RATE; GOLD NANOPARTICLES; GROWTH PROCESS; PHOTOVOLTAICS; SI NANOWIRE; SILICON NANOWIRES;

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; GOLD COATINGS; GOLD DEPOSITS; NANOWIRES; PLASMA DEPOSITION; RAMAN SPECTROSCOPY;

AMORPHOUS SILICON;

EID: 76449115834     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200903348     Document Type: Article

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