Variability analysis of FinFET-based devices and circuits considering electrical confinement and width quantization

IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD

Volumn , Issue , 2009, Pages 505-512

  Rasouli, Seid Hadi ^a   Endo, Kazuhiko ^b   Banerjee, Kaustav ^a  

^a University of California   (United States)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER AIDED DESIGN; INTEGRATED CIRCUIT DESIGN; RANDOM PROCESSES; STATIC RANDOM ACCESS STORAGE; THRESHOLD VOLTAGE; TIMING CIRCUITS;

GATE WORK FUNCTION; QUANTUM-MECHANICAL EFFECTS; STATIC NOISE MARGIN; STATISTICAL FRAMEWORK; SUB-THRESHOLD SRAM; SUBTHRESHOLD SWING; ULTRA-LOW-VOLTAGE; VARIABILITY ANALYSIS;

FINFET;

EID: 76449093630     PISSN: 10923152     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/1687399.1687495     Document Type: Conference Paper

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