Three terminal double barrier resonant tunneling devices with the base contact to the quantum well

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 1997, Pages 139-142

  Lepsa, M I ^a   van de Roer, Th G ^a   Kwaspen, J J M ^a   Smalbrugge, E ^a   van der Vleuten, W ^a   Kaufmann, L M F ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRIC PROPERTIES; ELECTRON TUNNELING; METALLIZING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

DOUBLE BARRIER RESONANT TUNNELING (DBRT) DEVICES;

TUNNEL DIODES;

EID: 0030635302     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)