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Journal of Applied Physics

Volumn 96, Issue 8, 2004, Pages 4189-4196

Electron spin resonance study of GaAs:Er,O grown by organometallic vapor phase epitaxy

(6) Yoshida, Makoto a Hiraka, Kensaku a Ohta, Hitoshi a Fujiwara, Yasufumi b Koizumi, Atsushl c Takeda, Yoshikazu c

a KOBE UNIVERSITY (Japan)

b OSAKA UNIVERSITY (Japan)

c NAGOYA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE MEASUREMENT; ANISOTROPY; ARSENIC; DOPING (ADDITIVES); ENERGY TRANSFER; GRAIN GROWTH; ILLUMINATING ENGINEERING; LIGHT ABSORPTION; PARAMAGNETIC RESONANCE; PARAMAGNETISM; PHOTOLUMINESCENCE; SIGNAL DETECTION; VAPOR PHASE EPITAXY;

ANGULAR DEPENDENCE; PHOTOEXCITATION; PHOTOLUMINESCENCE EXCITATION (PLE); SHELL TRANSITION; X-RAY ABSORPTION FINE STRUCTURE (EXAFS);

ORGANOMETALLICS;

EID: 7644227917 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1786669 Document Type: Article

Times cited : (13)

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