ESR study of GaAs:Er codoped with oxygen grown by organometallic vapor phase epitaxy

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 10, Issue 1-3, 2001, Pages 395-398

  Yoshikawa, J ^a   Urakawa, C ^a   Ohta, H ^a   Koide, T ^b   Kawamoto, T ^b   Fujiwara, Y ^b   Takeda, Y ^b  

^a KOBE UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

GaAs:Er; Oxygen codoping; Photoluminescence; X band ESR

Indexed keywords

ANISOTROPY; ERBIUM; METALLORGANIC VAPOR PHASE EPITAXY; OXYGEN; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

CODOPING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035336617     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(01)00124-2     Document Type: Article

References (7)