Room-temperature 1.54 μm light emission from Er,O-codoped GaAs/GaInP light-emitting diodes grown by low-pressure organometallic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2223-2225

  Koizumi, Atsushi ^a   Fujiwara, Yasufumi ^a   Inoue, Kentaro ^a   Urakami, Akira ^a   Yoshikane, Taketoshi ^a   Takeda, Yoshikazu ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Double heterostructures; Electroluminescence; Erbium; GaAs; Light emitting diode; Organometallic vapor phase epitaxy; Oxygen

Indexed keywords

CURRENT DENSITY; ELECTROLUMINESCENCE; ERBIUM; GROUND STATE; HETEROJUNCTIONS; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; OXYGEN; SEMICONDUCTING GALLIUM COMPOUNDS; TEMPERATURE;

CURRENT INJECTION; LOW PRESSURE ORGANOMETALLIC VAPOR PHASE EPITAXY;

LIGHT EMITTING DIODES;

EID: 0038005951     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2223     Document Type: Article

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