Atomic configurations of Er centers in GaAs:Er,O and AlGaAs:Er,O studied by site-selective luminescence spectroscopy

Journal of Applied Physics

Volumn 82, Issue 8, 1997, Pages 3997-4005

  Takahei, K ^a,b   Taguchi, A ^a   Hogg, R A ^a,c  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b ANRITSU CORPORATION   (Japan)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CRYSTAL SYMMETRY; ELECTRON ENERGY LEVELS; ERBIUM; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SPECTROSCOPY;

ATOMIC CONFIGURATIONS; PHOTOEXCITATION; PHOTOLUMINESCENCE EFFICIENCY; SITE SELECTIVE LUMINESCENCE SPECTROSCOPY; ZEEMAN ANALYSIS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031250583     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365709     Document Type: Article

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