Tuning of organic magnetoresistance by reversible modification of the active material

Synthetic Metals

Volumn 160, Issue 3-4, 2010, Pages 251-255

  Niedermeier, U ^a,b   Bagnich, S A ^b   Melzer, C ^b   Sarfert, W ^a   von Seggern, H ^b  

^a SIEMENS AG   (Germany)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Charge carrier traps; Magnetic field effect; OLED; OMR; Organic magnetoresistance; PPV

Indexed keywords

ACTIVE MATERIAL; ANNEALING TEMPERATURES; BULK POLYMER MATERIAL; ELECTRICAL DEVICES; ELECTRO-OPTICAL PERFORMANCE; MAGNETOCONDUCTANCE; MATERIAL MODIFICATIONS; MOLECULAR CONFORMATION; OLED; ORGANIC LIGHT-EMITTING DEVICES; ORGANIC MAGNETORESISTANCE; POLY(PARA-PHENYLENE VINYLENE); POLYMER MORPHOLOGY; THERMAL-ANNEALING; TRAP STATE;

ANNEALING; CHARGE CARRIERS; ELECTRIC RESISTANCE; HELMET MOUNTED DISPLAYS; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; OPTICAL INSTRUMENTS; OPTOELECTRONIC DEVICES; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANIC POLYMERS; TRANSPORT PROPERTIES;

MAGNETOELECTRONICS;

EID: 76349084498     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2009.06.012     Document Type: Article

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