Effects of spin-polarized injection and photoionization of MnZnO film on GaN-based lightemitting diodes

Optics Express

Volumn 18, Issue 3, 2010, Pages 2302-2308

  Chen, Lung Chien ^a   Tien, Ching Ho ^a   Mu, Chien Sheng ^a  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; IONIZATION; LIGHT EMITTING DIODES; MAGNETIC FIELDS; ORGANIC LIGHT EMITTING DIODES (OLED); PARTICLE DETECTORS; SEMICONDUCTING GALLIUM COMPOUNDS; SPIN DYNAMICS;

FORWARD BIAS; FORWARD CURRENTS; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; INJECTION CURRENTS; OPTICAL OUTPUT POWER; SPIN-POLARIZED CURRENTS; SPIN-POLARIZED INJECTION;

GALLIUM ALLOYS;

EID: 76149131684     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.002302     Document Type: Article

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