Pyro, ferro and dielectric properties of Ba0.8Sr 0.2TiO3 films deposited by sol-gel on platinized silicon substrates

Ferroelectrics

Volumn 362, Issue 1, 2008, Pages 79-86

  Mascot, M ^a   Fasquelle, D ^a   Velu, G ^a   Ferri, A ^b   Desfeux, R ^b   Courcot, L ^c   Carru, J C ^a  

^a UNIVERSITÉ DU LITTORAL CÔTE D OPALE   (France)

^b UNIVERSITÉ D'ARTOIS   (France)

^c UNIVERSITÉ DU LITTORAL CÔTE D OPALE   (France)

Author keywords

BST; Dielectric constant; Ferroelectric state; Losses; Pyroelectric coefficient; Silicon substrate; Sol gel; Thin film

Indexed keywords

DIELECTRIC CONSTANT; DIELECTRIC CONSTANTS; FERROELECTRIC STATE; PYROELECTRIC COEFFICIENTS; SILICON SUBSTRATES; SOL-GEL THIN FILMS;

BARIUM; DIFFRACTION; FERROELECTRIC THIN FILMS; FERROELECTRICITY; GELS; HOLOGRAPHIC INTERFEROMETRY; LITHOGRAPHY; PERMITTIVITY; PLATINUM; SEMICONDUCTING SILICON COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; SOLS; SUBSTRATES; THICK FILMS; THIN FILM DEVICES;

FERROELECTRIC FILMS;

EID: 75949104223     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190802003639     Document Type: Conference Paper

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