Dielectric characterization of ferroelectric thin films deposited on silicon

Microelectronics Reliability

Volumn 39, Issue 2, 1999, Pages 251-256

  Legrand, C ^a   Haccart, T ^b   Velu, G ^b   Chambonnet, D ^c   Remiens, D ^b   Burgnies, L ^a   Mehri, F ^a   Carru, J C ^a  

^a UNIVERSITÉ DU LITTORAL CÔTE D OPALE   (France)

^b UNIVERSITÉ DE VALENCIENNES   (France)

^c NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC IMPEDANCE MEASUREMENT; FERROELECTRIC MATERIALS; MATHEMATICAL MODELS; PERMITTIVITY; PLATINUM; SEMICONDUCTING SILICON; THIN FILMS;

FERROELECTRIC THIN FILMS;

DIELECTRIC FILMS;

EID: 0032666025     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00238-8     Document Type: Article

References (3)

1. 3 thin films produced in situ by sputtering. J Appl Phys 1996;79(2).
2. Chambonnet D, Audry C, Fages-Bonnerry A, Mer C, Fages C, Perriere J. Growth of BST thin films on silicon substrates. Application to integrated capacitors for DC-DC converters. In: European Meeting on Integrated Ferroelectric (EMIF2), 29-30 September, 1997.
3. Jaffe B, Cook WR, Jaffe H. Piezoelectric Ceramics. London: Academic, 1971.