Electrical properties of Pt/Nb-doped SrTiO3 Schottky junctions

Key Engineering Materials

Volumn 421-422, Issue , 2010, Pages 463-466

  Li, Jianyong ^a   Ohgaki, Takeshi ^a   Matsuoka, Ryota ^a   Okushi, Hideyo ^a   Ohashi, Naoki ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Nb doped; Perovskite oxide; Schottky junction; Semiconductor; Strontium titanate

Indexed keywords

CAPACITANCE; CERAMIC MATERIALS; HALL EFFECT; PEROVSKITE; PLATINUM COMPOUNDS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; STRONTIUM TITANATES;

CAPACITANCE-VOLTAGE CHARACTERISTICS; DONOR CONCENTRATIONS; HALL EFFECT MEASUREMENT; NB DOPED; PEROVSKITE OXIDES; SCHOTTKY DIODE MODELING; SCHOTTKY JUNCTIONS; SPUTTERING PROCESS;

SEMICONDUCTOR JUNCTIONS;

EID: 75749102951     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/KEM.421-422.463     Document Type: Conference Paper

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