Microstructures and characteristics of deep trap levels in ZnO varistors doped with Y2O3

Science in China, Series E: Technological Sciences

Volumn 52, Issue 12, 2009, Pages 3668-3673

  Liu, Jun ^a   Hu, Jun ^a   He, Jin Liang ^a   Lin, Yuan Hua ^a   Long, Wang Cheng ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Deep trap levels; Electrical properties; Varistors; Y2O3; ZnO

Indexed keywords

AVERAGE GRAIN SIZE; CAPTURE CROSS SECTIONS; COLE-COLE PLOTS; DEEP TRAPS; ELECTRICAL PROPERTIES; ELECTRICAL PROPERTY; INTRINSIC DEFECTS; NONLINEAR COEFFICIENT; RELAXATION PEAK; TRAP ENERGY LEVELS; VARISTOR CERAMICS; VOLTAGE GRADIENT; ZNO; ZNO VARISTORS;

ELECTRIC PROPERTIES; MICROSTRUCTURE; VARISTORS;

ZINC OXIDE;

EID: 75749085387     PISSN: 10069321     EISSN: 1862281X     Source Type: Journal    
DOI: 10.1007/s11431-009-0369-9     Document Type: Article

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