Modeling nonlinear electromechanical behavior of shocked silicon carbide

Journal of Applied Physics

Volumn 107, Issue 1, 2010, Pages

  Clayton, J D ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC THERMOELASTICITY; AXIAL COMPRESSIVE STRAIN; BASAL PLANES; CLEAVAGE FRACTURE; DISLOCATION LINES; DISLOCATION MOBILITY; EDGE DISLOCATION; ELASTIC FIELDS; ELECTROMECHANICAL BEHAVIOR; HIGH PRESSURE; HIGH TEMPERATURE; INELASTIC DEFORMATION; LARGE DEFORMATIONS; LATTICE DEFECTS; NON-LINEARITY; NONLINEAR ELASTICITY; ONE-DIMENSIONAL SHOCK LOADING; POLYTYPES; PRISM PLANES; SHOCKLEY PARTIAL DISLOCATIONS; THIRD-ORDER; YIELD STRENGTH;

ANISOTROPY; BRITTLE FRACTURE; CRYSTALLOGRAPHY; DEFECTS; EDGE DISLOCATIONS; ELASTICITY; ELECTROSTRICTION; PIEZOELECTRIC DEVICES; PIEZOELECTRICITY; POINT DEFECTS; SILICON CARBIDE; STRESSES; THERMAL EXPANSION;

SINGLE CRYSTALS;

EID: 75649105018     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3277030     Document Type: Article

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