Atomic-level computer simulation of SiC: Defect accumulation, mechanical properties and defect recovery

Philosophical Magazine

Volumn 85, Issue 4-7 SPEC. ISS., 2005, Pages 509-518

  Gao, F ^a   Weber, W J ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELASTIC MODULI; SILICON COMPOUNDS; SWELLING;

DAMAGE ACCUMULATION; DEFECT RECOVERY; ELASTIC CONSTANTS;

COMPUTER SIMULATION;

EID: 27144518331     PISSN: 14786435     EISSN: 14606992     Source Type: Journal    
DOI: 10.1080/02678370412331320170     Document Type: Conference Paper

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