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Volumn 572, Issue 1, 2004, Pages 32-42

Thin PTCDA films on Si(001): 2. Electronic structure

(5) Gustafsson, J B a Moons, E a Widstrand, S M a Gurnett, M a Johansson, L S O a

Author keywords

Electron emission; Near edge extended X ray absorption fine structure (NEXAFS); Semiconducting films; Silicon; X ray photoelectron spectroscopy

Indexed keywords

ABSORPTION; BINDING ENERGY; ELECTRON EMISSION; HYDROCARBONS; LOW ENERGY ELECTRON DIFFRACTION; MONOLAYERS; OPTOELECTRONIC DEVICES; SEMICONDUCTING FILMS; SILICON; THICK FILMS; THIN FILMS; X RAY ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

NEAR EDGE EXTENDED X RAY ABSORPTION FINE STRUCTURE (NEXAFS); ORGANIC MOLECULES; SILICON SURFACES; VACUUM DEPOSITION;

ELECTRONIC STRUCTURE;

EID: 7544243806 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/j.susc.2004.08.030 Document Type: Article

Times cited : (29)

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