Surface diffusion during decay of nano-island on Si(1 0 0) at high temperature

Surface Science

Volumn 572, Issue 1, 2004, Pages 84-92

  Toyoshima, S ^a,c   Kawamura, T ^a   Nishida, S ^b   Ichimiya, A ^b  

^a UNIVERSITY OF YAMANASHI   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c CANON INC   (Japan)

Author keywords

Adatoms; Monte Carlo simulations; Scanning tunneling microscopy; Silicon; Surface diffusion

Indexed keywords

COMPUTER SIMULATION; DECAY (ORGANIC); DIFFUSION; DIMERS; MONTE CARLO METHODS; SCANNING TUNNELING MICROSCOPY; SILICON; THERMOMETERS;

ADATOMS; SURFACE DIFFUSION; THERMAL RELAXATION;

SURFACE STRUCTURE;

EID: 7544220312     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.08.027     Document Type: Article

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