Surface diffusion during decay of 2-dimensional island on Si(100)

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 9 AB, 2003, Pages

  Toyoshima, Saori ^a   Kawamura, Takaaki ^a   Nishida, Shunsuke ^b   Ichimiya, Ayahiko ^b  

^a UNIVERSITY OF YAMANASHI   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

2D island; Adatom diffusion; Decay of nanostructure; Si(100) surface; Surface diffusion; Thermal relaxation

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; DIFFUSION; KINETIC THEORY; MONTE CARLO METHODS; SCANNING TUNNELING MICROSCOPY; SUBSTITUTION REACTIONS; SURFACE TREATMENT;

ADATOM; SURFACE DIFFUSION; THERMAL RELAXATION; TWO DIMENSIONAL ISLAND;

SEMICONDUCTING SILICON;

EID: 0344062965     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1087     Document Type: Letter

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