Surface roughening and metastable superstructures on wet-processed Si(111) surface induced by hydrogen desorption

Surface Science

Volumn 348, Issue 1-2, 1996, Pages 153-160

  Komeda, T ^a   Morita, Y ^b   Tokumoto, H ^b  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

Author keywords

Low index single crystal surfaces; Scanning tunneling microscopy; Semiconducting surfaces; Silicon; Surface structure, morphology, roughness, and topography; Surface thermodynamics

Indexed keywords

ANNEALING; DESORPTION; HYDROGEN; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; SURFACE ROUGHNESS; SURFACE STRUCTURE; SURFACES; THERMODYNAMICS; WETTING;

ANISOTROPIC ETCHING; HYDROGEN DESORPTION; LOW INDEX SINGLE CRYSTAL SURFACES; METASTABLE SUPERSTRUCTURE; MONOHYDRIDE; SURFACE DEFECTS; SURFACE THERMODYNAMICS; SURFACE TOPOGRAPHY;

SEMICONDUCTING SILICON;

EID: 0030110716     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)00992-2     Document Type: Article

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