Strain-engineered self-organized InAs/GaAs quantum dots for long wavelength (1.3 μm-1.5 μm) optical applications

AIP Conference Proceedings

Volumn 1199, Issue , 2009, Pages 527-528

  Usman, Muhammad ^a   Vasileska, Dragica ^b   Klimeck, Gerhard ^a  

^a Purdue University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Electronic structure; Quantum dots; Strain; Strain reducing layer; Wavelength

Indexed keywords

EID: 74849134458     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3295541     Document Type: Conference Paper

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