SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 96, Issue 2, 2010, Pages

Numerical approach for retention characteristics of double floating-gate memories

(2) Tanamoto, Tetsufumi a Muraoka, Kouichi a

a TOSHIBA CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGING ENERGIES; FLOATING-GATE STRUCTURES; FLOATING-GATES; INTERFERENCE EFFECTS; NUMERICAL APPROACHES; NUMERICAL INVESTIGATIONS; RETENTION CHARACTERISTICS; RETENTION TIME; THRESHOLD VOLTAGE SHIFTS;

THRESHOLD VOLTAGE;

EID: 74549213640 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3285170 Document Type: Article

Times cited : (12)

References (17)

1
- 74549148494
- 0163-1918
- M. Noguchi, T. Yaegashi, H. Koyama, M. Morikado, Y. Ishibashi, S. Ishibashi, K. Ino, K. Sawamura, T. Aoi, T. Maruyama, A. Kajita, E. Ito, M. Kishida, K. Kanda, K. Hosono, S. Miyamoto, F. Ito, Y. Hirata, G. Hemink, M. Higashitani, A. Mak, J. Chan, M. Koyanagi, S. Ohshima, H. Shibata, H. Tsunoda, and S. Tanaka, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007, S17-1.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2007 , pp. 17-1
- Noguchi, M.¹ Yaegashi, T.² Koyama, H.³ Morikado, M.⁴ Ishibashi, Y.⁵ Ishibashi, S.⁶ Ino, K.⁷ Sawamura, K.⁸ Aoi, T.⁹ Maruyama, T.¹⁰ Kajita, A.¹¹ Ito, E.¹² Kishida, M.¹³ Kanda, K.¹⁴ Hosono, K.¹⁵ Miyamoto, S.¹⁶ Ito, F.¹⁷ Hirata, Y.¹⁸ Hemink, G.¹⁹ Higashitani, M.²⁰ more..

2
- 74549167384
- 0743-1562
- J. Kim, A. J. Hong, S. M. Kim, E. B. Song, J. H. Park, J. Han, S. Choi, D. Jang, J. T. Moon, and K. L. Wang, Dig. Tech. Pap.-Symp. VLSI Technol. 0743-1562 2009, 10A-1.
- Dig. Tech. Pap. - Symp. VLSI Technol. , vol.2009
- Kim, J.¹ Hong, A.J.² Kim, S.M.³ Song, E.B.⁴ Park, J.H.⁵ Han, J.⁶ Choi, S.⁷ Jang, D.⁸ Moon, J.T.⁹ Wang, K.L.¹⁰

3
- 74549217991
- 0743-1562
- M. Ichige, Y. Takeuchi, K. Sugimae, A. Sato, M. Matsui, T. Kamigaichi, H. Kutsukake, Y. Ishibashi, M. Saito, S. Mori, H. Meguro, S. Miyazaki, T. Miwa, S. Takahashi, T. Iguchi, N. Kawai, S. Tamon, N. Arai, H. Kamata, T. Ninami, H. Iizuka, M. Higashitani, T. Pham, G. Hemink, M. Momodomi, and R. Shirota, Dig. Tech. Pap.-Symp. VLSI Technol. 0743-1562 2003, 7B-1.
- Dig. Tech. Pap. - Symp. VLSI Technol. , vol.2003
- Ichige, M.¹ Takeuchi, Y.² Sugimae, K.³ Sato, A.⁴ Matsui, M.⁵ Kamigaichi, T.⁶ Kutsukake, H.⁷ Ishibashi, Y.⁸ Saito, M.⁹ Mori, S.¹⁰ Meguro, H.¹¹ Miyazaki, S.¹² Miwa, T.¹³ Takahashi, S.¹⁴ Iguchi, T.¹⁵ Kawai, N.¹⁶ Tamon, S.¹⁷ Arai, N.¹⁸ Kamata, H.¹⁹ Ninami, T.²⁰ more..

4
- 0036686968
- Impact of floating gate dry etching on erase characteristics in NOR flash memory
- DOI 10.1109/LED.2002.801305, PII 1011092002801305
- J. D. Lee, S. H. Hur, and J. D. Choi, IEEE Electron Device Lett. 0741-3106 23, 264 (2002). 10.1109/LED.2002.801305 (Pubitemid 34950026)
- (2002) IEEE Electron Device Letters , vol.23 , Issue.8 , pp. 476-478
- Lee, W.H.¹ Lee, D.-K.² Na, Y.-H.³ Kim, K.-S.⁴ Ahn, K.-O.⁵ Suh, K.-D.⁶ Roh, Y.⁷

5
- 34548781390
- Flash memory device with 'I' shape floating gate for sub-70 nm NAND flash memory
- DOI 10.1143/JJAP.45.L1200
- S. G. Jung and J. H. Lee, Jpn. J. Appl. Phys., Part 2 0021-4922 45, L1200 (2006). 10.1143/JJAP.45.L1200 (Pubitemid 47434533)
- (2006) Japanese Journal of Applied Physics, Part 2: Letters , vol.45 , Issue.42-45
- Jung, S.-G.¹ Lee, J.-H.²

6
- 31544467839
- Device simulations in coupled floating-gate memories
- DOI 10.1143/JJAP.44.6349
- T. Tanamoto, R. Ohba, S. Yasuda, K. Abe, and S. Fujita, Jpn. J. Appl. Phys., Part 1 0021-4922 44, 6349 (2005). 10.1143/JJAP.44.6349 (Pubitemid 43160785)
- (2005) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.44 , Issue.8 , pp. 6349-6353
- Tanamoto, T.¹ Ohba, R.² Yasuda, S.-I.³ Abe, K.⁴ Fujita, S.⁵

7
- 0035809574
- 0003-6951. 10.1063/1.1353840
- C. Single, F. E. Prins, and D. P. Kem, Appl. Phys. Lett. 0003-6951 78, 1421 (2001). 10.1063/1.1353840
- (2001) Appl. Phys. Lett. , vol.78 , pp. 1421
- Single, C.¹ Prins, F.E.² Kem, D.P.³

8
- 33947111549
- Controlled resonant tunneling in a coupled double-quantum-dot system
- DOI 10.1063/1.2709905
- G. Shinkai, T. Hayashi, Y. Hirayama, and T. Fujisawa, Appl. Phys. Lett. 0003-6951 90, 103116 (2007). 10.1063/1.2709905 (Pubitemid 46398472)
- (2007) Applied Physics Letters , vol.90 , Issue.10 , pp. 103116
- Shinkai, G.¹ Hayashi, T.² Hirayama, Y.³ Fujisawa, T.⁴

9
- 0346302279
- 1050-2947. 10.1103/PhysRevA.61.022305
- T. Tanamoto, Phys. Rev. A 1050-2947 61, 022305 (2000) 10.1103/PhysRevA.61.022305;
- (2000) Phys. Rev. A , vol.61 , pp. 022305
- Tanamoto, T.¹

10
- 10844296386
- 1050-2947. 10.1103/PhysRevA.64.062306
- T. Tanamoto, Phys. Rev. A 1050-2947 64, 062306 (2001). 10.1103/PhysRevA.64.062306
- (2001) Phys. Rev. A , vol.64 , pp. 062306
- Tanamoto, T.¹

11
- 0034357428
- 0015-8208. 10.1002/1521-3978(200009)48:9/11<771::AID-PROP771>3.0. CO;2-E
- D. P. DiVincenzo, Fortschr. Phys. 0015-8208 48, 771 (2000). 10.1002/1521-3978(200009)48:9/11<771::AID-PROP771>3.0.CO;2-E
- (2000) Fortschr. Phys. , vol.48 , pp. 771
- Divincenzo, D.P.¹

12
- 36449008130
- A silicon nanocrystals based memory
- DOI 10.1063/1.116085, PII S0003695196003105
- S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe, and K. Chan, Appl. Phys. Lett. 0003-6951 68, 1377 (1996). 10.1063/1.116085 (Pubitemid 126688256)
- (1996) Applied Physics Letters , vol.68 , Issue.10 , pp. 1377-1379
- Tiwari, S.¹ Rana, F.² Hanafi, H.³ Hartstein, A.⁴ Crabbe, E.F.⁵ Chan, K.⁶

13
- 74549187172
- (Kluwer, Boston)
- P. Pavan, L. Larcher, and A. Marmiroli, Floating Gate Devices: Operation and Compact Modeling (Kluwer, Boston, 2004).
- (2004) Floating Gate Devices: Operation and Compact Modeling
- Pavan, P.¹ Larcher, L.² Marmiroli, A.³

14
- 0028430427
- 10.1109/16.285029
- K. F. Schuegraf and C. Hu, IEEE Trans. Electron Device 41, 761 (1994). 10.1109/16.285029
- (1994) IEEE Trans. Electron Device , vol.41 , pp. 761
- Schuegraf, K.F.¹ Hu, C.²

15
- 74549146912
- See supplementary material at E-APPLAB-96-061001 for numerical results for thicker tunneling oxide cases.
- See supplementary material at http://dx.doi.org/10.1063/1.3285170 E-APPLAB-96-061001 for numerical results for thicker tunneling oxide cases.

16
- 0035967129
- Manipulation of elementary charge in a silicon charge-coupled device
- DOI 10.1038/35069023
- A. Fujiwara and Y. Takahashi, Nature (London) 0028-0836 410, 560 (2001). 10.1038/35069023 (Pubitemid 32267194)
- (2001) Nature , vol.410 , Issue.6828 , pp. 560-562
- Fujiwara, A.¹ Takahashi, Y.²

17
- 0037847452
- Electron transport through double quantum dots
- DOI 10.1103/RevModPhys.75.1
- W. G. van der Wiel, S. D. Franceschi, J. M. Elzerman, T. Fujisawa, S. Tarucha, and L. P. Kouwenhoven, Rev. Mod. Phys. 0034-6861 75, 1 (2003). 10.1103/RevModPhys.75.1 (Pubitemid 36549937)
- (2003) Reviews of Modern Physics , vol.75 , Issue.1 , pp. 1-22
- Van Der Wiel, W.G.¹ De Franceschi, S.² Elzerman, J.M.³ Fujisawa, T.⁴ Tarucha, S.⁵ Kouwenhoven, L.P.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.