Contactless electroreflectance and photoluminescence characterization of Zn0.68Be0.06Mg0.26Se crystalline alloys

Journal of Alloys and Compounds

Volumn 491, Issue 1-2, 2010, Pages 472-476

  Dumcenco, D O ^a   Chen, Y M ^a   Huang, Y S ^a   Firszt, F ^b   Legowski S ^b   Meczynska H ^b   Marasek, A ^b   Tiong, K K ^c  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NICOLAUS COPERNICUS UNIVERSITY   (Poland)

^c NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

Luminescence; Optical properties; Optical spectroscopy; Semiconductors; TEM

Indexed keywords

BRIDGMAN; BROADENING PARAMETERS; CONTACTLESS ELECTROREFLECTANCE; CRYSTAL PHASIS; CRYSTALLINE ALLOYS; DECAY TIME; EXCITONIC EMISSION; EXCITONIC TRANSITION; FREE EXCITONS; FUNDAMENTAL BANDS; GAUSSIANS; INTER-BAND TRANSITION; LINE SHAPE; LOCALIZED EXCITON; LONGITUDINAL OPTICAL PHONON INTERACTIONS; NEAR BAND EDGE; OPTICAL CHARACTERIZATION; OPTICAL SPECTROSCOPY; ORDER OF MAGNITUDE; PHOTOLUMINESCENCE CHARACTERIZATION; PL SPECTRA; QUATERNARY COMPOUND; SEMICONDUCTORS; SEPARATION ENERGY; TEM; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; TIME-RESOLVED PL MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPE; TWO-COMPONENT;

CERIUM ALLOYS; CRYSTALLINE MATERIALS; ELECTRON MICROSCOPES; EXCITONS; LIGHT; LIGHT EMISSION; PHOTOLUMINESCENCE; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY; ZINC;

OPTICAL PROPERTIES;

EID: 74449092407     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.10.234     Document Type: Article

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