Defect characterization of ZnBeSe solid solutions by means of positron annihilation and photoluminescence techniques

Journal of Applied Physics

Volumn 94, Issue 3, 2003, Pages 1647-1653

  Plazaola, F ^a,f   Flyktman, J ^a   Saarinen, K ^a   Dobrzynski, L ^b,c   Firszt, F ^d   Legowski, S ^d   Meczynska, H ^d   Paszkowicz, W ^e   Reniewicz, H ^b  

^a AALTO UNIVERSITY   (Finland)

^b UNIVERSITY OF BIALYSTOK   (Poland)

^c SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

^d NICOLAUS COPERNICUS UNIVERSITY   (Poland)

^e INSTITUTE OF PHYSICS   (Poland)

^f UNIVERSITY OF THE BASQUE COUNTRY UPV EHU   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; DEFECTS; ELECTRON ENERGY LEVELS; PHOTOLUMINESCENCE; POSITRON ANNIHILATION SPECTROSCOPY; SEMICONDUCTOR GROWTH;

OPTICAL TRANSITION;

SOLID SOLUTIONS;

EID: 0042011363     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1591993     Document Type: Article

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