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Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2593-2596

Annealing studies of Si-implanted Al0.25Ga0.75N

(7) Ryu, Mee Yi a Chitwood, E A a Claunch, E N a Yeo, Y K a Hengehold, R L a Fellows, J A b Steiner, T c

a AIR FORCE INSTITUTE OF TECHNOLOGY (United States)

b AIR FORCE RESEARCH LABORATORY (United States)

c AIR FORCE OFFICE OF SCIENTIFIC RESEARCH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION EFFICIENCY; ANNEAL TEMPERATURES; BAND EDGE LUMINESCENCE; ELECTRICAL ACTIVATION EFFICIENCY; IMPLANTATION DAMAGE; NITROGEN ENVIRONMENT; PHOTOLUMINESCENCE INTENSITIES; SAPPHIRE SUBSTRATES;

ALUMINUM; ALUMINUM NITRIDE; ANNEALING; NITRIDES; SAPPHIRE; SILICON;

GALLIUM ALLOYS;

EID: 74449085671 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200303528 Document Type: Conference Paper

Times cited : (8)

References (7)

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