Emission properties and thermal annealing of InGaN/GaN multiple quantum wells with different protection layers

Physica Status Solidi (B) Basic Research

Volumn 241, Issue 12, 2004, Pages 2816-2819

  Cho, H K ^a   Park, T E ^a   Kim, D C ^a   Shin, J E ^b   Lee, J S ^b  

^a Dong A University   (South Korea)

^b LG Electronics Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC INTERMIXING; STARK EFFECTS; THERMAL ANNEALING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 7444247250     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200405088     Document Type: Conference Paper

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