High quantum efficiency of photoluminescence in GaN and ZnO

Materials Research Society Symposium Proceedings

Volumn 892, Issue , 2006, Pages 587-592

  Reshchikov, M A ^a   Gu, X ^a   Nemeth, B ^b   Nause, J ^b   Morkoc H ^a  

^a VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

^b Cermet Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; GALLIUM NITRIDE; IMPURITIES; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; ZINC OXIDE;

DONOR-ACCEPTOR PAIR TRANSITIONS; NONRADIATIVE RECOMBINATION; SI-DOPED GAN LAYER;

PHOTOLUMINESCENCE;

EID: 33646416763     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. M. A. Reshchikov and R. Y. Korotkov, Phys. Rev. B 64, 115205 (2001).
2. M. A. Reshchikov and H. Morkoç, J. Appl. Phys. 97, 061301 (2005).
3. J. Nause and B. Nemeth, Semicond. Sci. and Technol. 20, S45 (2005).
4. B. K. Meyer et al., Phys. Stat. Sol. (b) 241, 231 (2004).
5. rd International Conference on Defects in Semiconductors, Awaji Island, Japan, July 24-29, 2005, accepted for publication in Physica B.