Tunnel field-effect transistors for future low-power nano-electronics

ECS Transactions

Volumn 25, Issue 7, 2009, Pages 455-462

  Verhulsta, A S ^a,b   Vandenberghe, W G ^a,b   Leonelli, D ^a,b   Rooyackers, R ^a   Vandooren, A ^a   De Gendt, S ^a,b   Heyns, M M ^a,b   Groeseneken, G ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; METALS; MOS DEVICES; MOSFET DEVICES; NANOELECTRONICS; OXIDE SEMICONDUCTORS; SEMICONDUCTING GERMANIUM; TRANSISTORS; VOLTAGE SCALING;

GATE CONFIGURATION; METAL OXIDE SEMICONDUCTOR; ON CURRENTS; OPERATING PRINCIPLES; SILICON CHANNEL; SILICON-BASED; SUBTHRESHOLD SWING; SUPPLY-VOLTAGE SCALING;

TUNNEL FIELD EFFECT TRANSISTORS;

EID: 74349119298     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3203983     Document Type: Conference Paper

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