Influence of irradiation by neutrons on the properties of p+-n-n+ Si radiation detectors

Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4664-4666

  Kalendra, Vidmantas ^a   Kažukauskas, Vaidotas ^a   Vainorius, Neimantas ^a   Vaitkus, Juozas V ^a  

^a VILNIUS UNIVERSITY   (Lithuania)

Author keywords

Deep levels; Photoconductivity spectra; Radiation defects; Silicon

Indexed keywords

BAND GAPS; DEEP LEVEL; EFFECTIVE CONCENTRATION; HIGH-ENERGY NEUTRON; LOW TEMPERATURES; PHOTOCONDUCTIVITY DECAY; PHOTOCONDUCTIVITY SPECTRUM; RADIATION DEFECTS; SI DETECTORS; STEADY STATE; THERMAL TREATMENT;

ACTIVATION ENERGY; NEUTRONS; PHOTOCONDUCTIVITY; RADIATION; RADIATION DETECTORS;

NEUTRON IRRADIATION;

EID: 74349096098     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.157     Document Type: Article

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