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Volumn 19, Issue 3, 2009, Pages 167-174
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Observation of self-limiting regime in the atomic layer deposition of ZnO films using nitrous oxide as the oxygen supply
a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
II-VI SEMICONDUCTORS;
INTERFACE STATES;
METALLIC FILMS;
MONOLAYERS;
NITROGEN OXIDES;
OXIDE FILMS;
OXIDE MINERALS;
OXYGEN SUPPLY;
SAPPHIRE;
WIDE BAND GAP SEMICONDUCTORS;
ZINC OXIDE;
LOW TEMPERATURES;
OPTICAL CHARACTERISTICS;
SAPPHIRE SUBSTRATES;
SELF-LIMITING PROCESS;
TEMPERATURE WINDOW;
THICKNESS UNIFORMITY;
TRANSMISSION AND ABSORPTION;
VISIBLE LIGHT REGION;
ATOMIC LAYER DEPOSITION;
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EID: 74349091914
PISSN: 19385862
EISSN: 19386737
Source Type: Conference Proceeding
DOI: 10.1149/1.3120698 Document Type: Conference Paper |
Times cited : (1)
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References (9)
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