Improvement of the properties and electrical performance on TiCl4-based TiN film using sequential flow chemical vapor deposition process

Thin Solid Films

Volumn 518, Issue 8, 2010, Pages 2285-2289

  Cheng, Ming Da ^a   Luoh, Tuung ^a   Su, Chin Ta ^a   Yang, Ta Hung ^a   Chen, Kuang Chao ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

Chemical vapor deposition; Metal organic chemical vapor deposition; Secondary ion mass spectroscopy; Titanium chloride; Titanium nitride; Transmission electron microscopy

Indexed keywords

BARRIER FILMS; CHEMICAL VAPOR DEPOSITION PROCESS; CONTACT PROCESS; CVD PROCESS; CVD TINS; ELECTRICAL PERFORMANCE; FILM DEPOSITION; KELVIN CONTACTS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; PROCESS YIELD; REACTION TEMPERATURE; RESISTANCE MEASUREMENT; SECONDARY ION MASS SPECTROSCOPY; TIN FILMS; TITANIUM CHLORIDE; TRANSMISSION ELECTRON; UNIFORM DISTRIBUTION;

CARBON FILMS; CHEMICAL COMPOUNDS; CHLORINE; CHLORINE COMPOUNDS; DEPOSITION; ELECTRIC PROPERTIES; INDUSTRIAL CHEMICALS; IONS; MASS SPECTROMETERS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION;

TITANIUM NITRIDE;

EID: 74249116922     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.013     Document Type: Article

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