Anisotropic strain estimated from lattice parameters measured by bond method using X-ray diffraction, in molecular beam epitaxy-grown GaAs/Si(001)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 2, 1998, Pages 450-454

  Yodo, Tokuo ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Anisotropy; Anisotropy of dislocations; GaAs Si; Heteroepitaxial growth; Lattice parameter; Plastic deformation; Strain; Stress

Indexed keywords

ANISOTROPY; DISLOCATIONS (CRYSTALS); ELASTICITY; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PLASTIC DEFORMATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; STRAIN; STRESS RELAXATION; X RAY CRYSTALLOGRAPHY;

DOUBLE CRYSTAL X RAY DIFFRACTION ANALYSIS; HETEROEPITAXIAL GROWTH;

SEMICONDUCTING FILMS;

EID: 0032002844     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.450     Document Type: Article

References (21)

1. J. W. Matthew, S. Mader and T. B. Light: J. Appl. Phys. 41 (1970) 3800.
2. Y. Gonzalez, A. Mazuelas, M. Recio, L. Gonzalez, G. Armelles and F. Briones: Appl. Phys. A 53 (1991) 260.
3. Y. Matsuda, K. Fujita and S. Hinotani: Appl. Surf. Sci. 48/49 (1991) 231.
4. R. M. Lum, J. K. Klingert, R. B. Bylsma, A. M. Glass, A. T. Macrander, T. D. Harris and M. G. Lamont: J. Appl. Phys. 64 (1988) 6727.
5. S. Sharan and J. Narayan: J. Appl. Phys. 66 (1989) 2376.
6. T. Yao, Y. Okada, H. Kawanami, S. Matsui, A. Imagawa and K. Ishida: Mater. Res. Soc. Symp. Proc. 91 (1987) 63.
7. W. D. Nix: Metall. Trans. A 20 (1989) 2217.
8. S. Timoshenko: J. Opt. Soc. Am. 11 (1925) 233.
9. K. Asai, H. Katayama and Y. Shiba: Jpn. J. Appl. Phys. 32 (1993) 637.
10. J. H. Van der Merwe: J. Appl. Phys. 34 (1963) 123.
11. W. L. Bond: Acta Crystallogr. 13 (1960) 814.
12. T. Yodo, M. Tamura and T. Saitoh: J. Cryst. Growth 141 (1994) 331.
13. T. Yodo and M. Tamura: Jpn. J. Appl. Phys. 34 (1995) 3457.
14. T. Yodo: Jpn. J. Appl. Phys. 34 (1995) 4631.
15. K. Ishida, M. Akiyama and S.Nishi: Jpn. J. Appl. Phys. 26 (1987) L530.
16. M. Enatsu, M. Shimizu, T. Mizuki, K. Sugawara and T. Sakurai: Jpn. J. Appl. Phys. 26 (1987) L1468.
17. N. Lucas, H. Zabel, H. Morkoç and H. Unlu: Appl. Phys. Lett. 52 (1988) 2117.
18. W. Stolz, F. E. Guimaraes and K. Ploog: J. Appl. Phys. 63 (1988) 492.
19. A. Yamamoto and M. Yamaguchi: Mater. Res. Soc. Symp. Proc. 116 (1988) 285.
20. M. Akiyama, T. Ueda and S. Onozawa: Mater. Res. Soc. Symp. Proc. 116 (1988) 79.
21. H. Alexander and H. Gottschalk: Inst. Phys. Conf. Ser. 104 (1989) 281.