Large-yield preparation of high-electronic-quality graphene by a langmuir-schaefer approach

Small

Volumn 6, Issue 1, 2010, Pages 35-39

  Gengler, Régis Y N ^a   Veligura, Alina ^a   Enotiadis, Apostolos ^b   Diamanti, Evmorfia K ^b   Gournis, Dimitrios ^a,b   Józsa, Csaba ^a   Van Wees, Bart J ^a   Rudolf, Petra ^a  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

^b UNIVERSITY OF IOANNINA   (Greece)

Author keywords

Electrical properties; Graphene; Graphene oxide; Langmuir schaefer films; Self assembly

Indexed keywords

CONTROLLED DEPOSITION; ELECTRICAL PROPERTY; GRAPHENES; HIGH-ELECTRONIC-QUALITY; LANGMUIR-SCHAEFER FILMS; LANGMUIRS; METALLIC REGIME; SCALE DEPOSITION; SHEET SIZE; SINGLE LAYER; STARTING MATERIALS;

ELECTRIC PROPERTIES; GRAPHENE; OXIDE FILMS; SELF ASSEMBLY;

GRAPHITE;

GRAPHITE; NANOMATERIAL; TITANIUM; TITANIUM DIOXIDE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRONICS; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRONICS; GRAPHITE; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTIES; TITANIUM;

EID: 73949111057     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200901120     Document Type: Article

References (20)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, A. A. Firsov, Science 2004, 306, 666.
2. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos, A. A. Firsov, Nature 2005, 438, 197.
3. Y. Zhang, J. W. Tan, H. L. Stormer, P. Kim, Nature 2005, 438, 201.
4. N. Tombros, C. Jozsa, M. Popinciuc, H. T. Jonkman, B. J. van Wees, Nature 2007, 448, 571.
5. K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J.-H. Ahn, P. Kim, J.-Y. Choi, B. H. Hong, Nature 2009, 457, 706.
6. Y. Wang, Y. Huang, Y. Song, X. Y. Zhang, Y. F. Ma, J. J. Liang, Y. S. Chen, Nano Lett. 2009, 9, 220.
7. X. L. Li, G. Y. Zhang, X. D. Bai, X. M. Sun, X. R. Wang, E. Wang, H. J. Dai, Nat. Nanotechnol. 2008, 3, 538.
8. C. Gmez-Navarro, R. T. Weitz, A. M. Bittner, M. Scolari, A. Mews, M. Burghard, K. Kern, Nano Lett. 2007, 7, 3499.
9. H. A. Becerril, J. Mao, Z. Liu, R. M. Stoltenberg, Z. Bao, Y. Chen, ACS Nano 2008, 2, 463.
10. L. Staudenmaier, Ber. Dtsch. Chem. Ges. 1899, 31, 1481.
11. B. C. Brodie, Proc. R. Soc. London 1859, 10, 11.
12. W. Hummers, R. Offeman, J. Am. Chem. Soc. 1958, 80, 1339.
13. I. Langmuir, V. J. Schaefer, J. Am. Chem. Soc. 1938, 60, 1351.
14. A. B. Bourlinos, D. Gournis, D. Petridis, T. Szabo, A. Szeri, I. Dekany, Langmuir 2003, 19, 6050.
15. K. B. Blodgett, J. Am. Chem. Soc. 1935, 57, 10071022.
16. I. Jung, M. Pelton, R. Piner, D. A. Dikin, S. Stankovich, S. Watcharotone, M. Hausner, R. S. Ruoff, Nano Lett. 2007, 7, 3569.
17. L. J. Cote, F. Kim, J. X. Huang, J. Am. Chem. Soc. 2009, 232, 1043.
18. J. Martin, N. Akerman, G. Ulbricht, T. Lohmann, J. H. Smet, K. von Klitzing, A. Yacoby, Nat. Phys. 2008, 4, 144.
19. V. C. Tung, M. J. Allen, Y. Yang, R. B. Kaner, Nat. Nanotechnol. 2008, 4, 25.
20. F. Schedin, A. K. Geim, S. V. Morozov, E. W. Hill, P. Blake, M. I. Katsnelson, K. S. Novoselov, Nat. Mater. 2007, 6, 652.