Charge collection efficiency measurements of heavily irradiated segmented n-in-p and p-in-n silicon detectors for use at the super-LHC

IEEE Transactions on Nuclear Science

Volumn 56, Issue 3, 2009, Pages 765-770

  Affolder, Anthony ^a   Allport, Phil ^a   Casse, Gianluigi ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

Charge collection efficiency; Radiation damage; Silicon micro strip detectors; Super LHC

Indexed keywords

CHARGE COLLECTION; CHARGE COLLECTION EFFICIENCY; CHARGE COLLECTION PROPERTIES; DETECTOR SYSTEMS; FLUENCES; HIGH-SPEED; LARGE HADRON COLLIDER; LOW NOISE; MICRO-STRIP DETECTORS; PLANAR DEVICES; RADIATION TOLERANT; REACTOR NEUTRONS; READOUT ELECTRONICS; SEGMENTED SILICON DETECTOR; SILICON MICRO-STRIP DETECTORS; SUPER-LHC; TRACKING DETECTORS; TRACKING SYSTEM;

COLLIDING BEAM ACCELERATORS; LUMINANCE; PARTICLE DETECTORS; PIXELS; RADIATION DAMAGE; SENSORS; STRONTIUM;

SILICON DETECTORS;

EID: 67649233290     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2012856     Document Type: Article

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