Study of the effects of growth temperature and time on the alignment of Si quantum dots on hafnium oxide coated single wall carbon nanotubes

Thin Solid Films

Volumn 518, Issue 6 SUPPL. 1, 2010, Pages

  Olmedo, Mario ^a   Martinez Morales, Alfredo A ^a   Liu, Gang ^b   Yengel, Emre ^a   Ozkan, Cengiz S ^a   Lau, Chun Ning ^b   Ozkan, Mihrimah ^a   Liu, Jianlin ^a  

^a University of California Riverside   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Carbon Nanotubes; Quantum dots; Self assembly

Indexed keywords

ALIGNED GROWTH; EPITAXIAL SI; GROWTH CONDITIONS; GROWTH TIME; PERIODIC ALIGNMENT; QUANTUM DOT; QUANTUM DOTS; SI QUANTUM DOT; SI SEED; SINGLE-WALL CARBON NANOTUBES; SUBSTRATE SURFACE;

ALIGNMENT; CARBON NANOTUBES; GROWTH TEMPERATURE; HAFNIUM; HAFNIUM OXIDES; SELF ASSEMBLY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SINGLE-WALLED CARBON NANOTUBES (SWCN); THIN FILM DEVICES; THIN FILMS; WALLS (STRUCTURAL PARTITIONS);

SEMICONDUCTOR QUANTUM DOTS;

EID: 73649106935     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.050     Document Type: Article

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