Fabrication of transimpedance amplifier module and post-amplifier module for 40 Gb/s optical communication systems

ETRI Journal

Volumn 31, Issue 6, 2009, Pages 749-754

  Lee, Jong Min ^a   Min, Byoung Gue ^a   Kim, Seong II ^a   Lee, Kyung Ho ^a   Kim, Hae Cheon ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

40 Gb s; InGaAs InP HBT; Module; Package; Post amplifier; Transimpedance amplifier

Indexed keywords

40 GB/S; 40-GB/S RECEIVER; AMPLIFIER MODULES; INGAAS/INP; MAXIMUM OSCILLATION FREQUENCY; MODULE PACKAGES; OUTPUT VOLTAGE SWINGS; TRANSIMPEDANCE AMPLIFIERS; WIDE BANDWIDTH;

BIPOLAR TRANSISTORS; COMMUNICATION SYSTEMS; CUTOFF FREQUENCY; FABRICATION; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; OPTICAL COMMUNICATION; POLYCHLORINATED BIPHENYLS;

DIFFERENTIAL AMPLIFIERS;

EID: 73449091862     PISSN: 12256463     EISSN: None     Source Type: Journal    
DOI: 10.4218/etrij.09.1209.0038     Document Type: Article

References (8)

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