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Volumn , Issue , 2001, Pages 204-207

A capacitive peaking of InGaP/GaAs HBT transimpedance amplifier

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITORS; ELECTRIC IMPEDANCE; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED OPTOELECTRONICS; OPTICAL COMMUNICATION EQUIPMENT; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

EID: 0034853529     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (5)

References (9)
  • 1
    • 0026135798 scopus 로고
    • 8.2 GHz bandwidth monolithic integrated opto-electronic receiver using MSM photodiode and 0.5μm recessed-gate AlGaAs/GaAs HEMTs
    • (1991) Electron. Lett. , vol.27 , pp. 734-735
    • Hurm, V.1
  • 9
    • 0020139257 scopus 로고
    • Design of Butterworth-type transimpedance and bootstrap-transimpedance pre-amplifiers for fiber-optic receivers
    • (1982) IEEE Trans. Circuits Syst. , vol.CAS-29 , Issue.6 , pp. 375-382
    • Abraham, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.