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Volumn 23, Issue 1, 2010, Pages 87-90

Ferromagnetic resonance study of Ga 1-x Mn x As fabricated on (311) GaAs wafers by Mn ion implantation and pulsed-laser melting

Author keywords

(311) GaAs wafers; Ferromagnetic resonance; Ion implantation and pulsed laser melting; Magnetic anisotropy

Indexed keywords

(311) GAAS WAFERS; ANGULAR DEPENDENCE; ANISOTROPY FIELD; GAAS WAFER; GROWTH METHOD; LASER MELTING; MAGNETIC ANISOTROPY FIELD; STONER-WOHLFARTH MODEL; UNIAXIAL ANISOTROPY; UNIAXIAL ANISOTROPY FIELDS;

EID: 73349124776     PISSN: 15571939     EISSN: 15571947     Source Type: Journal    
DOI: 10.1007/s10948-009-0539-9     Document Type: Conference Paper
Times cited : (4)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.