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Volumn 84, Issue 11, 2001, Pages 2645-2651

Computer Simulations of Diffraction Effects due to Stacking Faults in β-SiC: II, Experimental Verification

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HIGH RESOLUTION ELECTRON MICROSCOPY; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EID: 0035526575     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2001.tb01066.x     Document Type: Article
Times cited : (45)

References (15)
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  • 2
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  • 3
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    • S. Prochazka, "Abnormal Grain Growth in Polycrystalline SiC"; pp. 394-402 in Proceedings of the Third International Conference on Silicon Carbide (Miami Beach, FL, Sept. 1973). Edited by R. C. Marshall, J. W. Faust, and C. E. Ryan, University of South Carolina Press, Columbia, SC, 1974.
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    • Padture, N.P.1
  • 5
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  • 6
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  • 7
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  • 8
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  • 15
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.