Characteristics of ZnO-based TFT using La2O3 high-k dielectrics

Journal of the Korean Physical Society

Volumn 55, Issue 5 PART 1, 2009, Pages 1906-1909

  Moon, Yeon Keon ^a   Lee, Sih ^a   Park, Jong Wan ^a   Kim, Do Hyun ^b   Lee, Je Hun ^b   Jeong, Chang Oh ^b  

^a Hanyang University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

High k dielectrics; Lanthanum oxide; Thin film transistor; Zinc oxide

Indexed keywords

EID: 73249152178     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.55.1906     Document Type: Article

References (8)

1. Jae-Hong Jeon, Hee-Hwan Choe, Kang-Woong Lee, Jae- Heon Shin, Chi-Sun Hwang, Sang-Hee Ko Park and Jong-Hyun Seo, J. Korean Phys. Soc. 53, 412 (2008).
2. Kenji Nomura, Hiromichi Ohta, Kazushige Ueda , Toshio Kamiya, Masahiro Hiran and Hideo Hosono, Microelect. Engin. 72, 294 (2004).
3. R. Navamathavan, Jae-Hong Lim, Dae-Kue Hwang, Baek- Hyun Kim, Jin-Yong Oh, Jin-Ho Yang, Hyun-Sik Kim and Seong-Ju Park, J. Korean Phys. Soc 48, 271 (2006).
4. Hideya Kumomi, Kenji Nomura, Toshio Kamiya and Hideo Hosono, Thin Solid Films 516, 1516 (2008).
5. R. L. Hoffman, B. J. Norris and J. F. Wager, Appl. Phys. Lett. 82, 733 (2003).
6. I. Kim, Y. Choi and H. Tuller, Appl. Phys. Lett. 87, 043509 (2005).
7. Dieter K. Schroder, Semiconductor Material and Device Characterization, 2nd ed. (Wiley, New York, 1998).
8. Yeon-Keon Moon, Dae-Yong Moon, Sih Lee, Sang-Ho Lee, Chang-Oh Jeong, and Jong-Wan Park, J. Vac. Sci. Technol. B 26, 1472 (2008).