Diodes based on bilayers comprising of tetraphenyl porphyrin derivative and fullerene for hybrid nanoelectronics

Chemical Physics Letters

Volumn 485, Issue 1-3, 2010, Pages 137-141

  Koiry, S P ^a   Jha, P ^a   Aswal, D K ^a   Nayak, S K ^a   Majumdar, C ^a   Chattopadhyay, S ^a   Gupta, S K ^a   Yakhmi, J V ^a  

^a BHABHA ATOMIC RESEARCH CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; BI-LAYER; DONOR-ACCEPTORS; ELECTROGRAFTING; MOLECULAR DIODES; RECTIFICATION BEHAVIOR; RECTIFICATION RATIO; SELF ASSEMBLY PROCESS; SUPRAMOLECULAR COMPLEXES; TETRAPHENYL PORPHYRINS; THEORETICAL CALCULATIONS;

DIODES; ELECTRIC RECTIFIERS; FULLERENES; INFRARED SPECTROSCOPY; PORPHYRINS; SYNTHESIS (CHEMICAL);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 73149113095     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2009.12.014     Document Type: Article

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