Electrochemical grafting of octyltrichlorosilane monolayer on Si

Applied Physics Letters

Volumn 90, Issue 11, 2007, Pages

  Koiry, S P ^a   Aswal, D K ^a   Saxena, Vibha ^a   Padma, N ^a   Chauhan, A K ^a   Joshi, N ^a   Gupta, S K ^a   Yakhmi, J V ^a   Guerin, D ^b   Vuillaume, D ^b  

^a BHABHA ATOMIC RESEARCH CENTRE   (India)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTROCHEMISTRY; ELECTROLYTES; GRAFTING (CHEMICAL); SILANES; SILICON;

ELECTROCHEMICAL GRAFTING; OCTYLTRICHLOROSILANE MONOLAYER;

MONOLAYERS;

EID: 33947315959     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2713343     Document Type: Article

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