Growth and characterization of polycrystalline Si films prepared by hot-wire chemical vapor deposition

Thin Solid Films

Volumn 498, Issue 1-2, 2006, Pages 9-13

  Wuu, Dong Sing ^a,c   Lien, Shui Yang ^a   Mao, Hsin Yuan ^a   Wu, Bing Rui ^b   Hsieh, In Cha ^b   Yao, Pin Chuan ^b   Wang, Jui Hao ^a   Chen, Wen Chun ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b DA YEH UNIVERSITY   (Taiwan)

^c NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

Hot wire chemical vapor deposition; Hydrogen content; Poly Si; Raman scattering

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; MICROSTRUCTURE; PHOTOVOLTAIC CELLS; RAMAN SCATTERING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION;

HOT-WIRE CHEMICAL VAPOR DEPOSITION; HYDROGEN CONTENT; HYDROGEN DILUTION RATIO; SUBSTRATE TEMPERATURE;

POLYSILICON;

EID: 30944448062     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.054     Document Type: Conference Paper

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