Double-gate pentacene TFTs with improved control in subthreshold region

ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Volumn , Issue , 2009, Pages 205-208

  Cvetkovic, Nenad V ^a   Tsamados, Dimitrios ^a   Sidler, Katrin ^a   Bhandari, Jyotshna ^a   Savu, Veronica ^a   Brugger, Juergen ^a   Ionescu, Adrian M ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PROCESSING; DOUBLE-GATE; ORIGINAL DESIGN; PENTACENES; POLYIMIDE SUBSTRATE; STANDARD PHOTOLITHOGRAPHY; STENCIL LITHOGRAPHY; SUBTHRESHOLD REGION; SUBTHRESHOLD SWING; TOP GATE;

ELECTRIC POTENTIAL; POLYIMIDES; SEMICONDUCTING ORGANIC COMPOUNDS; VOLTAGE REGULATORS;

LEAKAGE CURRENTS;

EID: 72849130494     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2009.5331352     Document Type: Conference Paper

References (10)

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