Fabrication and characterization of porous silicon layers for applications in optoelectronics

Optical and Quantum Electronics

Volumn 41, Issue 3, 2009, Pages 189-201

  Dubey, R S ^a   Gautam, D K ^b  

^a SWARNANDHRA COLLEGE OF ENGINEERING AND TECHNOLOGY   (India)

^b NORTH MAHARASHTRA UNIVERSITY   (India)

Author keywords

Photoluminescence; Photonic crystals; Porous silicon; Raman peak; Reflectivity

Indexed keywords

AFM; ANODIZATIONS; ETCHING TIME; HF CONCENTRATION; LOWER FREQUENCIES; OPTICAL PHONONS; POROUS SILICON LAYERS; RAMAN MEASUREMENTS; RAMAN PEAK; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SEM IMAGE; SILICON CRYSTALLITES;

ETCHING; MONOLAYERS; MULTILAYERS; PHOTOLUMINESCENCE; PHOTONIC CRYSTALS; REFLECTION; SURFACE ROUGHNESS;

POROUS SILICON;

EID: 72449188101     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-009-9341-y     Document Type: Article

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