Critical analysis of results for a European GaN power amplifier after first iteration

European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Volumn , Issue , 2009, Pages 218-221

  González Garrido, María Ángeles ^a   Grajal, Jesús ^a   Cetronio, Antonio ^b   Marescialli, Luisa ^b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b SELEX SISTEMI INTEGRATI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; LIGHT AMPLIFIERS; MICROWAVE AMPLIFIERS; MICROWAVE INTEGRATED CIRCUITS; MICROWAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SILICON CARBIDE; SILICON COMPOUNDS;

CONTINUOUS-WAVE OPERATIONS; ELECTRONIC MOBILITY; GAN POWER AMPLIFIER; HIGH POWER AMPLIFIER; INPUT AND OUTPUT IMPEDANCE; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS (MMIC); POWER-ADDED EFFICIENCY; TWO-STAGE AMPLIFIERS;

BROADBAND AMPLIFIERS;

EID: 72449185692     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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